Samsung has announced on June 30 having launched the production of its first chips engraved in 3 nm. This technical advance is completed by the transition to a new transistor architecture: Samsung this time swaps the FinFET (fin field-effect transistor) design, used for years, for a slightly modified GAA (Gate all around) architecture. This double evolution allows the Korean giant to give birth to more efficient chips but also more efficient from an energy point of view.
Samsung thus speaks of 23% more performance compared to its old 5 nm process, but also of a reduction in consumption of up to 45%. At the same time, the firm also mentions a 16% reduction in the size of the chips engraved according to its new 3 nm process, which is currently only in its first generation. Additional optimizations should indeed occur later. This fine engraving will be used in particular for the manufacture of processors and memory chips, both for Samsung itself and for external customers.
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Implemented with a little delay on Samsung’s initial schedule, this transition to 3 nm engraving should allow Samsung Foundry to gain in attractiveness vis-Ć -vis its main competitor: the Taiwanese TSMC. This behemoth of semiconductor engraving, the world’s leading independent foundry, alone monopolizes nearly 54% of the market… compared to just 16.3% for Samsung.
With its 3 nm engraving, Samsung is however taking a little technological lead over its rival, which is also due to launch a 3 nm engraving process in 2022, but a little less sophisticated on paper. This process will effectively be restricted to the older FinFET technology.
Samsung Foundry therefore has a card to play to win back customers or attract new ones. It remains to be seen whether the Korean group will also manage to be attractive in terms of returns. In the past, the production of chips at Samsung Foundry had suffered on this point from the comparison against TSMC.
